Modeling of Current Conduction during RESET Phase of Pt/Ta2O5/TaOx/Pt Bipolar Resistive RAM Devices

Arya Lekshmi Jagath, T. Nandha Kumar, Haider Abbas F. Almurib. Modeling of Current Conduction during RESET Phase of Pt/Ta2O5/TaOx/Pt Bipolar Resistive RAM Devices. In IEEE 7th Non-Volatile Memory Systems and Applications Symposium, NVMSA 2018, Hakodate, Sapporo, Japan, August 28-31, 2018. pages 55-60, IEEE, 2018. [doi]

Abstract

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