Saeed Jahdi, Mohammad Hedayati, Bernard H. Stark, Phil H. Mellor. The Impact of Temperature and Switching Rate on Dynamic Transients of High-Voltage Silicon and 4H-SiC NPN BJTs: A Technology Evaluation. IEEE Transactions on Industrial Electronics, 67(6):4556-4566, 2020. [doi]
@article{JahdiHSM20,
title = {The Impact of Temperature and Switching Rate on Dynamic Transients of High-Voltage Silicon and 4H-SiC NPN BJTs: A Technology Evaluation},
author = {Saeed Jahdi and Mohammad Hedayati and Bernard H. Stark and Phil H. Mellor},
year = {2020},
doi = {10.1109/TIE.2019.2922918},
url = {https://doi.org/10.1109/TIE.2019.2922918},
researchr = {https://researchr.org/publication/JahdiHSM20},
cites = {0},
citedby = {0},
journal = {IEEE Transactions on Industrial Electronics},
volume = {67},
number = {6},
pages = {4556-4566},
}