The Impact of Temperature and Switching Rate on Dynamic Transients of High-Voltage Silicon and 4H-SiC NPN BJTs: A Technology Evaluation

Saeed Jahdi, Mohammad Hedayati, Bernard H. Stark, Phil H. Mellor. The Impact of Temperature and Switching Rate on Dynamic Transients of High-Voltage Silicon and 4H-SiC NPN BJTs: A Technology Evaluation. IEEE Transactions on Industrial Electronics, 67(6):4556-4566, 2020. [doi]

Abstract

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