A low-power 190-255 GHz frequency quadrupler in SiGe BiCMOS technology for on-chip spectroscopic applications

F. I. Jamal, M. H. Eissa, J. Borngraber, H. J. Ng, Dietmar Kissinger, J. Wessel. A low-power 190-255 GHz frequency quadrupler in SiGe BiCMOS technology for on-chip spectroscopic applications. In 2017 IEEE Radio and Wireless Symposium, RWS 2017, Phoenix, AZ, USA, January 15-18, 2017. pages 94-97, IEEE, 2017. [doi]

Abstract

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