Comparative study of NBTI as a function of Si film orientation and thickness in SOI pMOSFETs

Sung Jun Jang, Dae Hyun Ka, Chong-Gun Yu, Kwan-Su Kim, Won-Ju Cho, Jong-Tae Park. Comparative study of NBTI as a function of Si film orientation and thickness in SOI pMOSFETs. Microelectronics Reliability, 47(9-11):1411-1415, 2007. [doi]

@article{JangKYKCP07,
  title = {Comparative study of NBTI as a function of Si film orientation and thickness in SOI pMOSFETs},
  author = {Sung Jun Jang and Dae Hyun Ka and Chong-Gun Yu and Kwan-Su Kim and Won-Ju Cho and Jong-Tae Park},
  year = {2007},
  doi = {10.1016/j.microrel.2007.07.015},
  url = {http://dx.doi.org/10.1016/j.microrel.2007.07.015},
  researchr = {https://researchr.org/publication/JangKYKCP07},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {47},
  number = {9-11},
  pages = {1411-1415},
}