A W-band stacked FET power amplifier with 17 dBm Psat in 45-nm SOI MOS - researchr publication authors

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Jefy Jayamon, Amir Agah, Bassel Hanafi, Hayg Dabag, James F. Buckwalter, Peter M. Asbeck. A W-band stacked FET power amplifier with 17 dBm Psat in 45-nm SOI MOS. In 2013 IEEE Radio and Wireless Symposium, Austin, TX, USA, January 20-23, 2013. pages 256-258, IEEE, 2013. [doi]

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