A W-band stacked FET power amplifier with 17 dBm Psat in 45-nm SOI MOS

Jefy Jayamon, Amir Agah, Bassel Hanafi, Hayg Dabag, James F. Buckwalter, Peter M. Asbeck. A W-band stacked FET power amplifier with 17 dBm Psat in 45-nm SOI MOS. In 2013 IEEE Radio and Wireless Symposium, Austin, TX, USA, January 20-23, 2013. pages 256-258, IEEE, 2013. [doi]

@inproceedings{JayamonAHDBA13,
  title = {A W-band stacked FET power amplifier with 17 dBm Psat in 45-nm SOI MOS},
  author = {Jefy Jayamon and Amir Agah and Bassel Hanafi and Hayg Dabag and James F. Buckwalter and Peter M. Asbeck},
  year = {2013},
  doi = {10.1109/RWS.2013.6486706},
  url = {http://dx.doi.org/10.1109/RWS.2013.6486706},
  researchr = {https://researchr.org/publication/JayamonAHDBA13},
  cites = {0},
  citedby = {0},
  pages = {256-258},
  booktitle = {2013 IEEE Radio and Wireless Symposium, Austin, TX, USA, January 20-23, 2013},
  publisher = {IEEE},
  isbn = {978-1-4673-2929-3},
}