Comprehensive Analysis of Source and Drain Recess Depth Variations on Silicon Nanosheet FETs for Sub 5-nm Node SoC Application

Jinsu Jeong, Jun-Sik Yoon, Seunghwan Lee, Rock-Hyun Baek. Comprehensive Analysis of Source and Drain Recess Depth Variations on Silicon Nanosheet FETs for Sub 5-nm Node SoC Application. IEEE Access, 8:35873-35881, 2020. [doi]

Abstract

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