Wun-Ciang Jhang, Pin-Han Chen, Chih-Chieh Hsu. Dependence of SiO2 Gate Leakage Current on Annealing Temperature of Solution Processed Tin Oxide Semiconductor. In IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2022, Taipei, Taiwan, July 6-8, 2022. pages 569-570, IEEE, 2022. [doi]
@inproceedings{JhangCH22,
title = {Dependence of SiO2 Gate Leakage Current on Annealing Temperature of Solution Processed Tin Oxide Semiconductor},
author = {Wun-Ciang Jhang and Pin-Han Chen and Chih-Chieh Hsu},
year = {2022},
doi = {10.1109/ICCE-Taiwan55306.2022.9869260},
url = {https://doi.org/10.1109/ICCE-Taiwan55306.2022.9869260},
researchr = {https://researchr.org/publication/JhangCH22},
cites = {0},
citedby = {0},
pages = {569-570},
booktitle = {IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2022, Taipei, Taiwan, July 6-8, 2022},
publisher = {IEEE},
isbn = {978-1-6654-7050-6},
}