Modeling the temperature dependence of sheet and contact resistances in SiGe: C HBTs from 4.3 to 423 K - researchr publication authors

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Xiaodi Jin, Christoph Weimer, Yaxin Zhang, Michael Schröter. Modeling the temperature dependence of sheet and contact resistances in SiGe: C HBTs from 4.3 to 423 K. In IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020, Monterey, CA, USA, November 16-19, 2020. pages 1-4, IEEE, 2020. [doi]

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