Table of Contents

• An over 220-GHz-Bandwidth Distributed Active Power Combiner in 250-nm InP DHBTTeruo Jyo, Munehiko Nagatani, Minoru Ida, Miwa Mutoh, Hitoshi Wakita, Naoki Terao, Hideyuki Nosaka. 1-4 [doi]
• 230-305 GHz, > 10-dBm-Output-Power Wideband Power Amplifier Using Low-Q Neutralization Technique in 60-nm InP-HEMT TechnologyHiroshi Hamada, Takuya Tsutsumi, Adam Pander, Masahito Nakamura, Go Itami, Hideaki Matsuzaki, Hiroki Sugiyama, Hideyuki Nosaka. 1-4 [doi]
• Modeling and characterization of HBT limitsA. J. Scholten. 1-8 [doi]
• Millimeter-Wave GaN SSPAs: Technology to Power 5G and the FutureJames Schellnberg. 1-7 [doi]
• A 10 mW LNA with Temperature Compensation for 24 GHz Radar Applications in SiGe BiCMOSVadim Issakov, Andreas Werthof. 1-4 [doi]
• A 20-33 GHz Direct-Conversion Transmitter in 45-nm SOI CMOSTiantong Ren, Sandeep Hari, Brian A. Floyd. 1-4 [doi]
• Monolithically Integrated GaN+CMOS Logic Circuits Design and Electro-Thermal Analysis for High-Voltage ApplicationsPilsoon Choi, Bugra Kanargi, Kenneth E. Lee, Chirn Chye Boon, Evelyn Wang, Chuan Seng Tan, Dimitri A. Antoniadis, Eugene A. Fitzgerald. 1-4 [doi]
• A 117 GHz Dual-Modulus Prescaler With Inductive Peaking for a Programmable Frequency DividerL. Polzin, M. van Delden, Nils Pohl, Klaus Aufinger, Thomas Musch. 1-4 [doi]
• Ultra-high Speed InP/GaAsSb-based Type-II Double-heterojunction Bipolar Transistors and Transfer Technology onto SiC SubstrateYuta Shiratori, Takuya Hoshi, Hideaki Matsuzaki. 1-4 [doi]
• A Highly-Efficient 120 GHz and 240 GHz Signal Source in A SiGe-TechnologyFlorian Vogelsang, David Starke, Jonathan Wittemeier, Holger Rücker, Nils Pohl. 1-4 [doi]
• 128-GS/s 1-to-4 SiGe Analog Demultiplexer with 36-GHz Bandwidth for 6-bit Data ConvertersPhilipp Thomas, Tobias Tannert, Markus Grözing, Manfred Berroth. 1-4 [doi]
• A 108-Gbps, 162-mW Cherry-Hooper Transimpedance AmplifierLuis A. Valenzuela, Aaron Maharry, Hector Andrade, Clint L. Schow, James F. Buckwalter. 1-4 [doi]
• Microwave Performance of Ferroelectric-Gated GaN HEMTsChunlei Wu, Jeffrey Smith, Suman Datta, Yu Cao, Jinqiao Xie, Edward Beam, Patrick Fay. 1-4 [doi]
• Compact Modeling of SiGe HBTs for Design of Cryogenic Control and Readout Circuits for Quantum ComputingHanbin Ying, Sunil G. Rao, Jeffrey W. Teng, Milad Frounchi, Markus Müller, Xiaodi Jin, Michael Schröter, John D. Cressler. 1-4 [doi]
• A Commercial Foundry Perspective of SiGe BiCMOS Process TechnologiesEdward Preisler. 1-5 [doi]
• A New Wideband, Low Insertion Loss SiGe Digital Step Attenuator A New Wideband, Low Insertion Loss SiGe Digital Step AttenuatorClifford D. Y. Cheon, Moon-Kyu Cho, Sunil G. Rao, Adilson S. Cardoso, Jeffrey D. Connor, John D. Cressler. 1-5 [doi]
• A High Efficiency 4-18 GHz GaN MMIC Power Amplifier based on 90nm T-gate GaN HEMT TechnologyShuoqi Chen, Vipan Kumar, Yu Cao. 1-4 [doi]
• 18-44GHz K/Ka-band Robust-35.5dBm Reconfigurable 90nm GaN HEMT LNAKevin W. Kobayashi, Vipan Kumar, Charles Campbell, Shuoqi Chen, Yu Cao. 1-4 [doi]
• A Wideband and High Efficiency Ka-band GaN Doherty Power Amplifier for 5G CommunicationsYutaro Yamaguchi 0002, Keigo Nakatani, Shintaro Shinjo. 1-4 [doi]
• Trends in Imaging Radars Powered by Modern SiliconSherif S. Ahmed. 1-4 [doi]
• Device Scaling roadmap and its implications for Logic and Analog platformAlessio Spessot, Bertrand Parvais, Amita Rawat, Kenichi Miyaguchi, Pieter Weckx, Doyoung Jang, Julien Ryckaert. 1-8 [doi]
• Using Channel Physical Relationships in pHEMT ModelingYingying Yang, Xiao Ping Li, Cristian Cismaru, Ravi Ramanathan. 1-4 [doi]
• A 24 GHz Sub-Harmonically Pumped Resistive Mixer in GaN HEMT TechnologyYu Yan, Thanh Ngoc Thi Do, Dan Kuylenstierna. 1-3 [doi]
• Circuit-Level Safe-Operating-Area of a High-Speed SiGe BiCMOS Wireline DriverArya Moradinia, Rafael P. Martinez, Jeffrey W. Teng, Nelson Sepúlveda-Ramos, Harrison Lee, John D. Cressler. 1-5 [doi]
• Modeling the temperature dependence of sheet and contact resistances in SiGe: C HBTs from 4.3 to 423 KXiaodi Jin, Christoph Weimer, Yaxin Zhang, Michael Schröter. 1-4 [doi]
• Photonic-Electronic Ultra-Broadband Signal Processing: Concepts, Devices, and ApplicationsChristian Koos, Sebastian Randel, Wolfgang Freude, Thomas Zwick, Johann-Christoph Scheytt, Jeremy Witzens, M. Walther, Tobias Harter, Sandeep Ummethala, Clemens Kieninger, Heiner Zwickel, Pablo Marin-Palomo, S. Muehlbrandt, Christoph Füllner, J. Schaefer, Sergiy Gudyriev, A. Zazzi, J. Müller, Axel Tessmann. 1-3 [doi]
• The DARPA Millimeter Wave Digital Arrays (MIDAS) ProgramTimothy M. Hancock, Steven Gross, James McSpadden, Lawrence Kushner, Jason Milne, Jon Hacker, Ryan Walsh, Craig Hornbuckle, Charles Campbell, Kevin Kobayashi. 1-4 [doi]
• A 120 GS/s 2: 1 Analog Multiplexer with High Linearity in SiGe-BiCMOS TechnologyMichael Collisi, Michael Möller 0004. 1-4 [doi]
• A Ku-band 70-W Class GaN Internally Matched High Power Amplifier with Wide Offset Frequencies of up to 400 MHz for Multi-Carrier Satellite CommunicationsTakaaki Yoshioka, Kenji Harauchi, Takumi Sugitani, Takashi Yamasaki, Hiroaki Ichinohe, Miyo Miyashita, Kazuya Yamamoto, Seiki Goto. 1-4 [doi]
• RF Performance of GaN-Based Graded-Channel HEMTsNivedhita Venkatesan, Jeong Moon, Joel Wong, Bob Grabar, Michael Antcliffe, Peter Chen, Erdum Arkun, Isaac Khalaf, David Fanning, Patrick Fay. 1-4 [doi]
• Broadband Reconfigurable Transceivers in SiGeGregory M. Flewelling. 1-4 [doi]
• Current collapse and kink effect in GaN RF HEMTs: the key role of the epitaxial bufferMichael J. Uren, Martin Kuball. 1-8 [doi]
• Analog/Mixed-Signal Integrated Circuits for Quantum ComputingJoseph C. Bardin. 1-8 [doi]
• SiGe Microwave Phototransistors for Microwave-Photonics ApplicationsZerihun Gedeb Tegegne, Marc D. Rosales, Francesco Peressutti, Jean-Marc Laheurte, Catherine Algani, Jacopo Nanni, Giovanni Tartarini, Carlos Viana, Jean-Luc Polleux. 1-7 [doi]
• Robust-5W Reconfigurable S/X-band GaN LNA using a 90nm T-gate GaN HEMT TechnologyKevin W. Kobayashi, Vipan Kumar, Charles Campbell, Shuoqi Chen, Yu Cao, Jose Jimenez. 1-4 [doi]
• Reverse Intermodulation in Multi-Tone Array TransmittersAnton N. Atanasov, Mark S. Oude Alink, Frank E. van Vliet. 1-4 [doi]
• Configurable and Scalable High-Side or Low-Side Driver in BiCMOS with 20dBµV Emission at 88MHzSri Navaneeth Easwaran, Sunil Kashyap Kashyap, Deepak Sreedharan, R. Hubbard, V. Devarajan, W. Ray. 1-4 [doi]
• Robust Extraction of Cardiff Model Parameters from Appropriately Tailored Measured Load-Pull DataPaul J. Tasker. 1-5 [doi]
• Fast pixel sensors for ionizing particles integrated in SiGe BiCMOSLorenzo Paolozzi, Giuseppe Iacobucci, Pierpaolo Valerio. 1-6 [doi]
• A Fully Integrated 20-500-GHz Coherent Detector with 2-Hz Frequency ResolutionMostafa Hosseini, Aydin Babakhani. 1-4 [doi]
• Ultra Broadband Low-Power 70 GHz Active Balun in 130-nm SiGe BiCMOSAniello Franzese, Mohamed Hussein Eissa, Thomas Mausolf, Dietmar Kissinger, Renato Negra, Andrea Malignaggi. 1-4 [doi]
• High Performance 150 mm RF GaN Technology with Low Memory EffectsK. Moore, B. Green, S. Klingbeil, C. Rampley, P. Renaud, D. Burdeaux, D. Hill, C. Zhu, J. Wan, J. Finder, K. Kim, C. Gaw, T. Arnold, F. Vanaverbeke, R. Embar, P. Rashev, M. Masood. 1-4 [doi]
• A 28-37 GHz Triple-Stage Transformer-Coupled SiGe LNA with 2.5 dB Minimum NF for Low Power Wideband Phased Array ReceiversAbdulrahman A. Alhamed, Gabriel M. Rebeiz. 1-4 [doi]
• Dependence of AM/PM non-linearity on source field-plate in GaN HEMTsSourabh Khandelwal, Petra Hammes, Marek Schmidt-Szalowski, Amit Dikshit, Menno Clerk. 1-4 [doi]
• HICUM/L2: Extensions over the last decadeMichael Schröter, Andreas Pawlak, A. Mukherjee, Didier Celi, Mario Krattenmacher. 1-4 [doi]
• III-V Nanowire MOSFETs: RF-Properties and ApplicationsLars-Erik Wernersson. 1-4 [doi]
• Impact of Large-signal Operation on DC Operating Point of Horizontal Current Bipolar TransistorZeljko Osrecki, Josip Zilak, Marko Koricic, Tomislav Suligoj. 1-4 [doi]
• Design of an 18-50 GHz SiGe HBT Cascode Non-uniform Distributed Power AmplifierSeokchul Lee, Inchan Ju, Yunyi Gong, Adilson S. Cardoso, Jeffrey D. Connor, Moon-Kyu Cho, John D. Cressler. 1-4 [doi]
• Materials and Device Engineering for High-Performance Gallium Oxide DevicesZhanbo Xia, Nidhin Kurian Kalarickal, Siddharth Rajan. 1-6 [doi]
• Design of a wideband, 4 - 42.5 GHz Low Noise Amplifier in 0.25 µm GaAs pHEMT TechnologyM. Sakalas, P. Sakalas. 1-4 [doi]
• SLC-ASM-HEMT: An Accurate compact model for SLCFET RF switchSourabh Khandelwal, Brian Novak, Jordan Merkel, Ken Nagamatsu, Justin Parke, Mark Yu, Patrick Shea, Robert Howell. 1-4 [doi]
• Physics of Hot Carrier Degradation Under Saturation Mode Operation in SiGe HBTsUppili S. Raghunathan, Pui Yee, Dave Brochu, Vibhor Jain, Harrison P. Lee, John D. Cressler, Dimitris P. Ioannou. 1-4 [doi]