Dimitri A. Antoniadis - researchr alias

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Viewing Publication 1 - 21 from 21

2020

Monolithically Integrated GaN+CMOS Logic Circuits Design and Electro-Thermal Analysis for High-Voltage ApplicationsPilsoon Choi, Bugra Kanargi, Kenneth E. Lee, Chirn Chye Boon, Evelyn Wang, Chuan Seng Tan, Dimitri A. Antoniadis, Eugene A. Fitzgerald. bcicts 2020: 1-4 [doi]

A Density Metric for Semiconductor Technology [Point of View]H.-S. Philip Wong, Kerem Akarvardar, Dimitri A. Antoniadis, Jeffrey Bokor, Chenming Hu, Tsu-Jae King Liu, Subhasish Mitra, James D. Plummer, Sayeef S. Salahuddin. pieee, 108(4):478-482, 2020. [doi]

2019

Implementation of InGaAs-OI Passive Devices and Its Application to 5G Millimeter-Wave Phase ShifterPilsoon Choi, Annie Kumar, Sachin Yadav, Xiao Gong, Dimitri A. Antoniadis, Eugene A. Fitzgerald. bcicts 2019: 1-4 [doi]

2016

Compact Model Parameter Extraction Using Bayesian Inference, Incomplete New Measurements, and Optimal Bias SelectionLi Yu, Sharad Saxena, Christopher Hess, Ibrahim Abe M. Elfadel, Dimitri A. Antoniadis, Duane S. Boning. tcad, 35(7):1138-1150, 2016. [doi]

2015

Statistical library characterization using belief propagation across multiple technology nodesLi Yu, Sharad Saxena, Christopher Hess, Ibrahim M. Elfadel, Dimitri A. Antoniadis, Duane S. Boning. date 2015: 1383-1388 [doi]

2014

Remembrance of Transistors Past: Compact Model Parameter Extraction Using Bayesian Inference and Incomplete New MeasurementsLi Yu, Sharad Saxena, Christopher Hess, Abe Elfadel, Dimitri A. Antoniadis, Duane S. Boning. dac 2014: 1-6 [doi]

Efficient performance estimation with very small sample size via physical subspace projection and maximum a posteriori estimationLi Yu, Sharad Saxena, Christopher Hess, Ibrahim M. Elfadel, Dimitri A. Antoniadis, Duane S. Boning. date 2014: 1-6 [doi]

2013

An ultra-compact virtual source FET model for deeply-scaled devices: Parameter extraction and validation for standard cell libraries and digital circuitsLi Yu, Omar Mysore, Lan Wei, Luca Daniel, Dimitri A. Antoniadis, Ibrahim M. Elfadel, Duane S. Boning. aspdac 2013: 521-526 [doi]

Statistical modeling with the virtual source MOSFET modelLi Yu, Lan Wei, Dimitri A. Antoniadis, Ibrahim M. Elfadel, Duane S. Boning. date 2013: 1454-1457 [doi]

2012

Cross-layer Energy and Performance Evaluation of a Nanophotonic Manycore Processor System Using Real Application WorkloadsGeorge Kurian, Chen Sun, Chia-Hsin Owen Chen, Jason E. Miller, Jürgen Michel, Lan Wei, Dimitri A. Antoniadis, Li-Shiuan Peh, Lionel C. Kimerling, Vladimir Stojanovic, Anant Agarwal. ipps 2012: 1117-1130 [doi]

2006

Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovationsDimitri A. Antoniadis, Ingvar Aberg, Cáit Ní Chléirigh, Osama M. Nayfeh, Ali Khakifirooz, Judy L. Hoyt. ibmrd, 50(4-5):363-376, 2006. [doi]

2004

Full-chip subthreshold leakage power prediction and reduction techniques for sub-0.18-/spl mu/m CMOSSiva G. Narendra, Vivek De, Shekhar Borkar, Dimitri A. Antoniadis, Anantha P. Chandrakasan. jssc, 39(3):501-510, 2004. [doi]

2002

New insights into carrier transport in n-MOSFETsAnthony Lochtefeld, Ihsan J. Djomehri, Ganesh Samudra, Dimitri A. Antoniadis. ibmrd, 46(2-3):347-358, 2002. [doi]

Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakageJames W. Tschanz, James T. Kao, Siva G. Narendra, Raj Nair, Dimitri A. Antoniadis, Anantha P. Chandrakasan, Vivek De. jssc, 37(11):1396-1402, 2002. [doi]

1997

SOI CMOS as a mainstream low power technology: a critical assessmentDimitri A. Antoniadis. islped 1997: 295-300 [doi]

1996

Simulation of semiconductor devices using a Galerkin/spherical harmonic expansion approach to solving the coupled Poisson-Boltzmann systemKhalid Rahmat, Jacob K. White, Dimitri A. Antoniadis. tcad, 15(10):1181-1196, 1996. [doi]

1993

Computation of drain and substrate currents in ultra-short-channel nMOSFET s using the hydrodynamic modelKhalid Rahmat, Jacob K. White, Dimitri A. Antoniadis. tcad, 12(6):817-824, 1993. [doi]

1988

A workstation approach to IC process and device designDuane S. Boning, Dimitri A. Antoniadis. dt, 5(2):36-47, 1988. [doi]

A boundary element method for modeling viscoelastic flow in thermal oxidationThye-Lai Tung, J. Connor, Dimitri A. Antoniadis. tcad, 7(2):215-224, 1988. [doi]

1985

A Boundary Integral Equation Approach to Oxidation ModelingThye-Lai Tung, Dimitri A. Antoniadis. tcad, 4(4):398-403, 1985. [doi]

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