Hideaki Matsuzaki - researchr alias

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Viewing Publication 1 - 23 from 23

2022

Nanosecond-scale Hitless λ-switching of SOA-integrated Electro-optically Tunable RTF Laser with +/-2.5-GHz Dynamic Frequency AccuracyYuta Ueda, Yusuke Saito, Takahiko Shindo, Shigeru Kanazawa, Wataru Kobayashi, Hideaki Matsuzaki, Mitsuteru Ishikawa. ofc 2022: 1-3 [doi]

2020

230-305 GHz, > 10-dBm-Output-Power Wideband Power Amplifier Using Low-Q Neutralization Technique in 60-nm InP-HEMT TechnologyHiroshi Hamada, Takuya Tsutsumi, Adam Pander, Masahito Nakamura, Go Itami, Hideaki Matsuzaki, Hiroki Sugiyama, Hideyuki Nosaka. bcicts 2020: 1-4 [doi]

300-GHz-Band 120-Gb/s Wireless Front-End Based on InP-HEMT PAs and MixersHiroshi Hamada, Takuya Tsutsumi, Hideaki Matsuzaki, Takuya Fujimura, Ibrahim Abdo, Atsushi Shirane, Kenichi Okada, Go Itami, Ho-Jin Song, Hiroki Sugiyama, Hideyuki Nosaka. jssc, 55(9):2316-2335, 2020. [doi]

High Output Power and Compact LAN-WDM EADFB Laser TOSA for 4 × 100-Gbit/s/λ 40-km Fiber-Amplifier-Less TransmissionShigeru Kanazawa, Takahiko Shindo, Mingchen Chen, Naoki Fujiwara, Masahiro Nada, Toshihide Yoshimatsu, Atsushi Kanda, Yasuhiko Nakanishi, Fumito Nakajima, Kimikazu Sano, Yozo Ishikawa, Kazuyo Mizuno, Hideaki Matsuzaki. ofc 2020: 1-3 [doi]

Inverted p-down pin photodiode exceeding 70-GHz bandwidth featuring low operating bias voltage of 2 VMasahiro Nada, Fumito Nakajima, Shoko Tatsumi, Yuki Yamada, Yasuhiko Nakanishi, Toshihide Yoshimatsu, Kimikazu Sano, Hideaki Matsuzaki. ecoc 2020: 1-4 [doi]

Burst-Tolerant λ-Switching of Electro-Optically Tunable Reflection-type Transversal Filter Laser with Single Active RegionYusuke Saito, Yuta Ueda, Takahiko Shindo, Shigeru Kanazawa, Hideaki Matsuzaki, Mitsuteru Ishikawa. ecoc 2020: 1-4 [doi]

Ultra-high Speed InP/GaAsSb-based Type-II Double-heterojunction Bipolar Transistors and Transfer Technology onto SiC SubstrateYuta Shiratori, Takuya Hoshi, Hideaki Matsuzaki. bcicts 2020: 1-4 [doi]

2019

300-GHz 120-Gb/s Wireless Transceiver with High-Output-Power and High-Gain Power Amplifier Based on 80-nm InP-HEMT TechnologyHiroshi Hamada, Takuya Tsutsumi, Go Itami, Hiroki Sugiyama, Hideaki Matsuzaki, Kenichi Okada, Hideyuki Nosaka. bcicts 2019: 1-4 [doi]

max and 5.4-V breakdown voltageTakuya Hoshi, Norihide Kashio, Yuta Shiratori, Kenji Kurishima, Minoru Ida, Hideaki Matsuzaki. ieiceee, 16(3):20181125, 2019. [doi]

2018

106-Gbit/s PAM4 40-km Transmission Using an Avalanche Photodiode With 42-GHz BandwidthMasahiro Nada, Toshihide Yoshimatsu, Yoshifumi Muramoto, Tetsuichiro Ohno, Fumito Nakajima, Hideaki Matsuzaki. ofc 2018: 1-3 [doi]

Dispersion tolerance of 100-Gbit/s PAM4 optical link utilizing high-speed avalanche photodiode receiverToshihide Yoshimatsu, Masahiro Nada, Shigeru Kanazawa, Fumito Nakajima, Hideaki Matsuzaki, Kimikazu Sano. ieiceee, 15(16):20180624, 2018. [doi]

2017

2016

max and 5-V Breakdown VoltageNorihide Kashio, Takuya Hoshi, Kenji Kurishima, Minoru Ida, Hideaki Matsuzaki. ieicet, 99-C(5):522-527, 2016. [doi]

56-Gbit/s 40-km optical-amplifier-less transmission with NRZ format using high-speed avalanche photodiodesMasahiro Nada, Takuya Hoshi, Shigeru Kanazawa, Toshikazu Hashimoto, Hideaki Matsuzaki. ofc 2016: 1-3 [doi]

2015

High-linearity avalanche photodiode for 40-km transmission with 28-Gbaud PAM4Masahiro Nada, Shigeru Kanazawa, Hiroshi Yamazaki, Yasuhiko Nakanishi, Wataru Kobayashi, Yoshiyuki Doi, Takaharu Ohyama, Tetsuichiro Ohno, Kiyoto Takahata, Toshikazu Hashimoto, Hideaki Matsuzaki. ofc 2015: 1-3 [doi]

2014

High-speed avalanche photodiodes for 100-Gb/s systems and beyondMasahiro Nada, Yoshifumi Muramoto, Haruki Yokoyama, Toshihide Yoshimatsu, Hideaki Matsuzaki. ecoc 2014: 1-3 [doi]

2006

W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-µm Gate InP-Based HEMTsKoji Inafune, Eiichi Sano, Hideaki Matsuzaki, Toshihiko Kosugi, Takatomo Enoki. ieicet, 89-C(7):954-958, 2006. [doi]

Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTsHideaki Matsuzaki, Takashi Maruyama, Takatomo Enoki, Masami Tokumitsu. ieicet, 89-C(7):949-953, 2006. [doi]

2004

Low-power and High-speed SCFL-inverter Using Pseudomorphic InGaAs Channel High Electron Mobility TransistorsHideaki Matsuzaki, Kimikazu Sano, Takatomo Enoki. ieiceee, 1(2):24-28, 2004. [doi]

Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistorsHideaki Matsuzaki, Hiroki Sugiyama, Haruki Yokoyama, Takashi Kobayashi, Takatomo Enoki. ieiceee, 1(11):292-297, 2004. [doi]

1999

A Novel High-Speed Flip-Flop Circuit Using RTDs and HEMTsHideaki Matsuzaki, Toshihiro Itoh, Masafumi Yamamoto. glvlsi 1999: 154-157 [doi]

Ultrahigh-Speed Circuits Using Resonant Tunneling DevicesMasafumi Yamamoto, Hideaki Matsuzaki, Toshihiro Itoh, Takao Waho, T. Akeyoshi, J. Osaka. glvlsi 1999: 150-153 [doi]

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Publications by 'Hideaki Matsuzaki'

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2022

2020

2019

2018

2017

2016

2015

2014

2006

2004

1999

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