Enabling in-situ logic-in-memory capability using resistive-RAM crossbar memory - researchr publication authors

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Naifeng Jing, Taozhong Li, Zhongyuan Zhao, Wei Jin, Yanan Sun, Weifeng He, Zhigang Mao. Enabling in-situ logic-in-memory capability using resistive-RAM crossbar memory. In Yuchen Song, Shaojun Wang, Brent Nelson, Junbao Li, Yu Peng, editors, 2016 International Conference on Field-Programmable Technology, FPT 2016, Xi'an, China, December 7-9, 2016. pages 233-236, IEEE, 2016. [doi]

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