Koh Johguchi, Kasuaki Yoshioka, Ken Takeuchi. NAND Phase Change Memory with Block Erase Architecture and Pass-Transistor Design Requirements for Write and Disturbance. IEICE Transactions, 97-C(4):351-359, 2014. [doi]
@article{JohguchiYT14,
title = {NAND Phase Change Memory with Block Erase Architecture and Pass-Transistor Design Requirements for Write and Disturbance},
author = {Koh Johguchi and Kasuaki Yoshioka and Ken Takeuchi},
year = {2014},
url = {http://search.ieice.org/bin/summary.php?id=e97-c_4_351},
researchr = {https://researchr.org/publication/JohguchiYT14},
cites = {0},
citedby = {0},
journal = {IEICE Transactions},
volume = {97-C},
number = {4},
pages = {351-359},
}