NAND Phase Change Memory with Block Erase Architecture and Pass-Transistor Design Requirements for Write and Disturbance

Koh Johguchi, Kasuaki Yoshioka, Ken Takeuchi. NAND Phase Change Memory with Block Erase Architecture and Pass-Transistor Design Requirements for Write and Disturbance. IEICE Transactions, 97-C(4):351-359, 2014. [doi]

Abstract

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