Silicon-germanium BiCMOS HBT technology for wireless power amplifier applications

Jeffrey B. Johnson, Alvin J. Joseph, David C. Sheridan, Ramana M. Maladi, Per-Olof Brandt, Jonas Persson, Jesper Andersson, Are Bjorneklett, Ulrika Persson, Fariborz Abasi, Lars Tilly. Silicon-germanium BiCMOS HBT technology for wireless power amplifier applications. J. Solid-State Circuits, 39(10):1605-1614, 2004. [doi]

@article{JohnsonJSMBPABP04,
  title = {Silicon-germanium BiCMOS HBT technology for wireless power amplifier applications},
  author = {Jeffrey B. Johnson and Alvin J. Joseph and David C. Sheridan and Ramana M. Maladi and Per-Olof Brandt and Jonas Persson and Jesper Andersson and Are Bjorneklett and Ulrika Persson and Fariborz Abasi and Lars Tilly},
  year = {2004},
  doi = {10.1109/JSSC.2004.833570},
  url = {https://doi.org/10.1109/JSSC.2004.833570},
  researchr = {https://researchr.org/publication/JohnsonJSMBPABP04},
  cites = {0},
  citedby = {0},
  journal = {J. Solid-State Circuits},
  volume = {39},
  number = {10},
  pages = {1605-1614},
}