Transient stress characterization of AlGaN/GaN HEMTs due to electrical and thermal effects

Jason P. Jones, Eric Heller, Donald Dorsey, Samuel Graham. Transient stress characterization of AlGaN/GaN HEMTs due to electrical and thermal effects. Microelectronics Reliability, 55(12):2634-2639, 2015. [doi]

Abstract

Abstract is missing.