Statistical Estimation of Dominant Physical Parameters for Leakage Variability in 32 Nanometer CMOS, Under Supply Voltage Variations

Smriti Joshi, Anne Lombardot, Philippe Flatresse, Carmelo D'agostino, Andre Juge, Edith Beigné, Stéphane Girard. Statistical Estimation of Dominant Physical Parameters for Leakage Variability in 32 Nanometer CMOS, Under Supply Voltage Variations. J. Low Power Electronics, 8(1):113-124, 2012. [doi]

@article{JoshiLFDJBG12,
  title = {Statistical Estimation of Dominant Physical Parameters for Leakage Variability in 32 Nanometer CMOS, Under Supply Voltage Variations},
  author = {Smriti Joshi and Anne Lombardot and Philippe Flatresse and Carmelo D'agostino and Andre Juge and Edith Beigné and Stéphane Girard},
  year = {2012},
  doi = {10.1166/jolpe.2012.1166},
  url = {http://dx.doi.org/10.1166/jolpe.2012.1166},
  researchr = {https://researchr.org/publication/JoshiLFDJBG12},
  cites = {0},
  citedby = {0},
  journal = {J. Low Power Electronics},
  volume = {8},
  number = {1},
  pages = {113-124},
}