Trench MOS barrier Schottky rectifier formed by counter-doping trench-bottom implantation

Miin-Horng Juang, Jim Yu, C. C. Hwang, D. C. Shye, J. L. Wang. Trench MOS barrier Schottky rectifier formed by counter-doping trench-bottom implantation. Microelectronics Reliability, 51(2):365-369, 2011. [doi]

Abstract

Abstract is missing.