The Analysis of Breakdown Voltage for the Double-gate MOSFET Using the Gaussian Doping Distribution

Hak-Kee Jung. The Analysis of Breakdown Voltage for the Double-gate MOSFET Using the Gaussian Doping Distribution. J. Inform. and Commun. Convergence Engineering, 10(2):200-204, 2012. [doi]

@article{Jung12a-1,
  title = {The Analysis of Breakdown Voltage for the Double-gate MOSFET Using the Gaussian Doping Distribution},
  author = {Hak-Kee Jung},
  year = {2012},
  doi = {10.6109/jicce.2012.10.2.200},
  url = {http://dx.doi.org/10.6109/jicce.2012.10.2.200},
  researchr = {https://researchr.org/publication/Jung12a-1},
  cites = {0},
  citedby = {0},
  journal = {J. Inform. and Commun. Convergence Engineering},
  volume = {10},
  number = {2},
  pages = {200-204},
}