Wontaeck Jung, Hyunggon Kim, Do-Bin Kim, Tae-Hyun Kim, Nam Hee Lee, Dongjin Shin, Minyoung Kim, Youngsik Rho, Hun-Jong Lee, Yujin Hyun, Jaeyoung Park, Taekyung Kim, Hwiwon Kim, Gyeongwon Lee, Jisang Lee, Joonsuc Jang, Jungmin Park, Sion Kim, Su Chang Jeon, Suyong Kim, Jung-Ho Song, Min-Seok Kim, Taesung Lee, Byung-Kwan Chun, Tongsung Kim, Young Gyu Lee, Hokil Lee, Soowoong Lee, Hwaseok Lee, Dooho Cho, Sangwan Nam, Yeomyung Kim, Kunyong Yoon, Yoonjae Lee, Sunghoon Kim, Jungseok Hwang, Raehyun Song, Hyunsik Jang, Jae-Ick Son, Hongsoo Jeon, Myunghun Lee, Mookyung Lee, Kisung Kim, Eungsuk Lee, Myeong-Woo Lee, Sungkyu Jo, Chan Ho Kim, Jong Chul Park, Kyunghwa Yun, Soonock Seol, Ji-Ho Cho, Seungjae Lee, Jin-yub Lee, Sunghoi Hur. 13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate. In IEEE International Solid-State Circuits Conference, ISSCC 2024, San Francisco, CA, USA, February 18-22, 2024. pages 236-237, IEEE, 2024. [doi]
@inproceedings{JungKKKLSKRLHPKKLLJPKJKSKLCKLLLLCNKYL24,
title = {13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate},
author = {Wontaeck Jung and Hyunggon Kim and Do-Bin Kim and Tae-Hyun Kim and Nam Hee Lee and Dongjin Shin and Minyoung Kim and Youngsik Rho and Hun-Jong Lee and Yujin Hyun and Jaeyoung Park and Taekyung Kim and Hwiwon Kim and Gyeongwon Lee and Jisang Lee and Joonsuc Jang and Jungmin Park and Sion Kim and Su Chang Jeon and Suyong Kim and Jung-Ho Song and Min-Seok Kim and Taesung Lee and Byung-Kwan Chun and Tongsung Kim and Young Gyu Lee and Hokil Lee and Soowoong Lee and Hwaseok Lee and Dooho Cho and Sangwan Nam and Yeomyung Kim and Kunyong Yoon and Yoonjae Lee and Sunghoon Kim and Jungseok Hwang and Raehyun Song and Hyunsik Jang and Jae-Ick Son and Hongsoo Jeon and Myunghun Lee and Mookyung Lee and Kisung Kim and Eungsuk Lee and Myeong-Woo Lee and Sungkyu Jo and Chan Ho Kim and Jong Chul Park and Kyunghwa Yun and Soonock Seol and Ji-Ho Cho and Seungjae Lee and Jin-yub Lee and Sunghoi Hur},
year = {2024},
doi = {10.1109/ISSCC49657.2024.10454343},
url = {https://doi.org/10.1109/ISSCC49657.2024.10454343},
researchr = {https://researchr.org/publication/JungKKKLSKRLHPKKLLJPKJKSKLCKLLLLCNKYL24},
cites = {0},
citedby = {0},
pages = {236-237},
booktitle = {IEEE International Solid-State Circuits Conference, ISSCC 2024, San Francisco, CA, USA, February 18-22, 2024},
publisher = {IEEE},
isbn = {979-8-3503-0620-0},
}