A novel sort error hardened 10T SRAM cells for low voltage operation

In-Seok Jung, Yong-Bin Kim, Fabrizio Lombardi. A novel sort error hardened 10T SRAM cells for low voltage operation. In 55th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2012, Boise, ID, USA, August 5-8, 2012. pages 714-717, IEEE, 2012. [doi]

@inproceedings{JungKL12-2,
  title = {A novel sort error hardened 10T SRAM cells for low voltage operation},
  author = {In-Seok Jung and Yong-Bin Kim and Fabrizio Lombardi},
  year = {2012},
  doi = {10.1109/MWSCAS.2012.6292120},
  url = {https://doi.org/10.1109/MWSCAS.2012.6292120},
  researchr = {https://researchr.org/publication/JungKL12-2},
  cites = {0},
  citedby = {0},
  pages = {714-717},
  booktitle = {55th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2012, Boise, ID, USA, August 5-8, 2012},
  publisher = {IEEE},
  isbn = {978-1-4673-2526-4},
}