Self-Rectifying Characteristics Observed in O-Doped ZrN Resistive Switching Memory Devices Using Schottky Barrier Type Bottom Electrode

Jinsu Jung, Doowon Lee, Sungho Kim, Hee-Dong Kim. Self-Rectifying Characteristics Observed in O-Doped ZrN Resistive Switching Memory Devices Using Schottky Barrier Type Bottom Electrode. IEEE Access, 9:144264-144269, 2021. [doi]

Abstract

Abstract is missing.