Ka-band RF Front-End with 5dB NF and 16dB conversion gain in 45nm CMOS technology

Hyunki Jung, Dzuhri Radityo Utomo, Saebyeok Shin, Seok-Kyun Han, Sang-Gug Lee, Jusung Kim. Ka-band RF Front-End with 5dB NF and 16dB conversion gain in 45nm CMOS technology. In International SoC Design Conference, ISOCC 2018, Daegu, South Korea, November 12-15, 2018. pages 105-106, IEEE, 2018. [doi]

Abstract

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