Origins and implications of increased channel hot carrier variability in nFinFETs

Ben Kaczer, Jacopo Franco, M. Cho, Tibor Grasser, Philippe J. Roussel, Stanislav Tyaginov, M. Bina, Yannick Wimmer, L. M. Procel, L. Trojman, Felice Crupi, G. Pitner, V. Putcha, Pieter Weckx, Erik Bury, Z. Ji, A. De Keersgieter, Thomas Chiarella, Naoto Horiguchi, Guido Groeseneken, Aaron Thean. Origins and implications of increased channel hot carrier variability in nFinFETs. In IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015. pages 3, IEEE, 2015. [doi]

@inproceedings{KaczerFCGRTBWPT15,
  title = {Origins and implications of increased channel hot carrier variability in nFinFETs},
  author = {Ben Kaczer and Jacopo Franco and M. Cho and Tibor Grasser and Philippe J. Roussel and Stanislav Tyaginov and M. Bina and Yannick Wimmer and L. M. Procel and L. Trojman and Felice Crupi and G. Pitner and V. Putcha and Pieter Weckx and Erik Bury and Z. Ji and A. De Keersgieter and Thomas Chiarella and Naoto Horiguchi and Guido Groeseneken and Aaron Thean},
  year = {2015},
  doi = {10.1109/IRPS.2015.7112706},
  url = {http://dx.doi.org/10.1109/IRPS.2015.7112706},
  researchr = {https://researchr.org/publication/KaczerFCGRTBWPT15},
  cites = {0},
  citedby = {0},
  pages = {3},
  booktitle = {IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015},
  publisher = {IEEE},
  isbn = {978-1-4673-7362-3},
}