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Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La::2::O::3:: gate dielectrics

Kuniyuki Kakushima, K. Tachi, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai. Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La::2::O::3:: gate dielectrics. Microelectronics Reliability, 50(6):790-793, 2010. [doi]

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