Design and modelling of a voltage controlled N-well resistor using the MOS tunneling diode structure - researchr publication authors

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Jean-Baptiste Kammerer, Luc Hébrard, Vincent Frick, Philippe Poure, Francis Braun. Design and modelling of a voltage controlled N-well resistor using the MOS tunneling diode structure. In Proceedings of the 2002 9th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2002, Dubrovnik, Croatia, September 15-18, 2002. pages 1123-1126, IEEE, 2002. [doi]

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