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Comparison of Current Suppression Methods to Enhance Short Circuit Capability of 1.2 kV SiC Power MOSFETs: A New Approach using a Series-connected, Gate-Source-Shorted Si Depletion-Mode MOSFET vs Reduced Gate Bias Operation

Ajit Kanale, B. Jayant Baliga. Comparison of Current Suppression Methods to Enhance Short Circuit Capability of 1.2 kV SiC Power MOSFETs: A New Approach using a Series-connected, Gate-Source-Shorted Si Depletion-Mode MOSFET vs Reduced Gate Bias Operation. In IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society, Lisbon, Portugal, October 14-17, 2019. pages 5114-5119, IEEE, 2019. [doi]

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Ajit Kanale

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B. Jayant Baliga

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