Gate Leakage Effects on Yield and Design Considerations of PD/SOI SRAM Designs

Rouwaida Kanj, Rajiv V. Joshi, Jayakumaran Sivagnaname, Jente B. Kuang, Dhruva Acharyya, Tuyet Nguyen, Chandler McDowell, Sani R. Nassif. Gate Leakage Effects on Yield and Design Considerations of PD/SOI SRAM Designs. In 8th International Symposium on Quality of Electronic Design (ISQED 2007), 26-28 March 2007, San Jose, CA, USA. pages 33-40, IEEE Computer Society, 2007. [doi]

Abstract

Abstract is missing.