20nm FinFET-based SRAM cell: Impact of variability and design choices on performance characteristics

Shushanik Karapetyan, Ulf Schlichtmann. 20nm FinFET-based SRAM cell: Impact of variability and design choices on performance characteristics. In 14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2017, Giardini Naxos, Italy, June 12-15, 2017. pages 1-4, IEEE, 2017. [doi]

Abstract

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