Impact of VT and Body-Biasing on Resistive Short Detection in 28nm UTBB FDSOI - LVT and RVT Configurations

Amit Karel, Mariane Comte, Jean Marc Gallière, Florence Azaïs, Michel Renovell. Impact of VT and Body-Biasing on Resistive Short Detection in 28nm UTBB FDSOI - LVT and RVT Configurations. In IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2016, Pittsburgh, PA, USA, July 11-13, 2016. pages 164-169, IEEE, 2016. [doi]

@inproceedings{KarelCGAR16-0,
  title = {Impact of VT and Body-Biasing on Resistive Short Detection in 28nm UTBB FDSOI - LVT and RVT Configurations},
  author = {Amit Karel and Mariane Comte and Jean Marc Gallière and Florence Azaïs and Michel Renovell},
  year = {2016},
  doi = {10.1109/ISVLSI.2016.102},
  url = {http://doi.ieeecomputersociety.org/10.1109/ISVLSI.2016.102},
  researchr = {https://researchr.org/publication/KarelCGAR16-0},
  cites = {0},
  citedby = {0},
  pages = {164-169},
  booktitle = {IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2016, Pittsburgh, PA, USA, July 11-13, 2016},
  publisher = {IEEE},
  isbn = {978-1-4673-9039-2},
}