Investigation of the effect of growth interruption on the formation of InAs/GaAs quantum dot superlattice near the InAs critical thickness

R. J. Kashtiban, U. Bangert, M. Missous. Investigation of the effect of growth interruption on the formation of InAs/GaAs quantum dot superlattice near the InAs critical thickness. Microelectronics Journal, 40(3):479-482, 2009. [doi]

@article{KashtibanBM09,
  title = {Investigation of the effect of growth interruption on the formation of InAs/GaAs quantum dot superlattice near the InAs critical thickness},
  author = {R. J. Kashtiban and U. Bangert and M. Missous},
  year = {2009},
  doi = {10.1016/j.mejo.2008.06.078},
  url = {http://dx.doi.org/10.1016/j.mejo.2008.06.078},
  researchr = {https://researchr.org/publication/KashtibanBM09},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Journal},
  volume = {40},
  number = {3},
  pages = {479-482},
}