Semiconductor Device Parameter Extraction Based on I-V Measurements and Simulation

Dominik Kasprowicz. Semiconductor Device Parameter Extraction Based on I-V Measurements and Simulation. In Andrzej Napieralksi, editor, 26th International Conference on Mixed Design of Integrated Circuits and Systems, MIXDES 2019, Rzeszów, Poland, June 27-29, 2019. pages 321-326, IEEE, 2019. [doi]

@inproceedings{Kasprowicz19-0,
  title = {Semiconductor Device Parameter Extraction Based on I-V Measurements and Simulation},
  author = {Dominik Kasprowicz},
  year = {2019},
  doi = {10.23919/MIXDES.2019.8787195},
  url = {https://doi.org/10.23919/MIXDES.2019.8787195},
  researchr = {https://researchr.org/publication/Kasprowicz19-0},
  cites = {0},
  citedby = {0},
  pages = {321-326},
  booktitle = {26th International Conference on Mixed Design of Integrated Circuits and Systems, MIXDES 2019, Rzeszów, Poland, June 27-29, 2019},
  editor = {Andrzej Napieralksi},
  publisher = {IEEE},
  isbn = {978-83-63578-16-9},
}