Takamasa Kawanago, Kuniyuki Kakushima, Yoshinori Kataoka, A. Nishiyama, Nobuyuki Sugii, H. Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai. Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT. In Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013. pages 107-110, IEEE, 2013. [doi]
Abstract is missing.