Shengwei Ke, Jianping Hu, Xiaoxiao Xu. Independent-Gate P-Type TFETs using Double Heterojunction Structures. In IEEE International Symposium on Circuits and Systems, ISCAS 2019, Sapporo, Japan, May 26-29, 2019. pages 1-5, IEEE, 2019. [doi]
@inproceedings{KeHX19,
title = {Independent-Gate P-Type TFETs using Double Heterojunction Structures},
author = {Shengwei Ke and Jianping Hu and Xiaoxiao Xu},
year = {2019},
doi = {10.1109/ISCAS.2019.8702154},
url = {https://doi.org/10.1109/ISCAS.2019.8702154},
researchr = {https://researchr.org/publication/KeHX19},
cites = {0},
citedby = {0},
pages = {1-5},
booktitle = {IEEE International Symposium on Circuits and Systems, ISCAS 2019, Sapporo, Japan, May 26-29, 2019},
publisher = {IEEE},
isbn = {978-1-7281-0397-6},
}