A. Kerber. Impact of RTN on stochastic BTI degradation in scaled metal gate/high-k CMOS technologies. In IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015. pages 3, IEEE, 2015. [doi]
@inproceedings{Kerber15,
title = {Impact of RTN on stochastic BTI degradation in scaled metal gate/high-k CMOS technologies},
author = {A. Kerber},
year = {2015},
doi = {10.1109/IRPS.2015.7112704},
url = {http://dx.doi.org/10.1109/IRPS.2015.7112704},
researchr = {https://researchr.org/publication/Kerber15},
cites = {0},
citedby = {0},
pages = {3},
booktitle = {IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015},
publisher = {IEEE},
isbn = {978-1-4673-7362-3},
}