Ali Khakifirooz, Eduardo Anaya, Sriram Balasubrahrmanyam, Geoff Bennett, Daniel Castro, John Egler, Kuangchan Fan, Rifat Ferdous, Kartik Ganapathi, Omar Guzman, Chang-Wan Ha, Rezaul Haque, Vinaya Harish, Majid Jalalifar, Owen Jungroth, Sung-Taeg Kang, Golnaz Karbasian, Jee Yeon Kim, Siyue Li, Aliasgar S. Madraswala, Srivijay Maddukuri, Amr Mohammed, Shanmathi Mookiah, Shashi Nagabhushan, Binh Ngo, Deep Patel, Sai Kumar Poosarla, Naveen Prabhu V, Carlos Quiroga, Shantanu Rajwade, Ahsanur Rahman, Jalpa Shah, Rohit S. Shenoy, Ebenezer Tachie-Menson, Archana Tankasala, Sandeep Krishna Thirumala, Sagar Upadhyay, Krishnasree Upadhyayula, Ashley Velasco, Nanda Kishore Babu Vemula, Bhaskar Venkataramaiah, Jiantao Zhou, Bharat Pathak, Pranav Kalavade. A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-NAND Technology and Featuring a 23.3Gb/mm2 Bit Density. In IEEE International Solid- State Circuits Conference, ISSCC 2023, San Francisco, CA, USA, February 19-23, 2023. pages 400-401, IEEE, 2023. [doi]
@inproceedings{KhakifiroozABBCEFFGGHHHJJKKKLMMMMNNPP23,
title = {A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-NAND Technology and Featuring a 23.3Gb/mm2 Bit Density},
author = {Ali Khakifirooz and Eduardo Anaya and Sriram Balasubrahrmanyam and Geoff Bennett and Daniel Castro and John Egler and Kuangchan Fan and Rifat Ferdous and Kartik Ganapathi and Omar Guzman and Chang-Wan Ha and Rezaul Haque and Vinaya Harish and Majid Jalalifar and Owen Jungroth and Sung-Taeg Kang and Golnaz Karbasian and Jee Yeon Kim and Siyue Li and Aliasgar S. Madraswala and Srivijay Maddukuri and Amr Mohammed and Shanmathi Mookiah and Shashi Nagabhushan and Binh Ngo and Deep Patel and Sai Kumar Poosarla and Naveen Prabhu V and Carlos Quiroga and Shantanu Rajwade and Ahsanur Rahman and Jalpa Shah and Rohit S. Shenoy and Ebenezer Tachie-Menson and Archana Tankasala and Sandeep Krishna Thirumala and Sagar Upadhyay and Krishnasree Upadhyayula and Ashley Velasco and Nanda Kishore Babu Vemula and Bhaskar Venkataramaiah and Jiantao Zhou and Bharat Pathak and Pranav Kalavade},
year = {2023},
doi = {10.1109/ISSCC42615.2023.10067616},
url = {https://doi.org/10.1109/ISSCC42615.2023.10067616},
researchr = {https://researchr.org/publication/KhakifiroozABBCEFFGGHHHJJKKKLMMMMNNPP23},
cites = {0},
citedby = {0},
pages = {400-401},
booktitle = {IEEE International Solid- State Circuits Conference, ISSCC 2023, San Francisco, CA, USA, February 19-23, 2023},
publisher = {IEEE},
isbn = {978-1-6654-9016-0},
}