Double Gate TFET with Germanium Pocket and Metal drain using Dual Oxide

Anam Khan, Sajad A. Loan. Double Gate TFET with Germanium Pocket and Metal drain using Dual Oxide. In International Conference on Microelectronics, ICM 2021, New Cairo City, Egypt, December 19-22, 2021. pages 170-173, IEEE, 2021. [doi]

Abstract

Abstract is missing.