Hideyuki Kikuchihara, Mitiko Miura-Mattausch, Takeshi Mizoguchi, Hajime Nagase, Makoto Hashimoto, Yusuke Kawaguchi, Hans Jürgen Mattausch. Modeling of SJ-MOSFET for High-Voltage Applications with Inclusion of Carrier Dynamics during Switching. In 4th International Symposium on Devices, Circuits and Systems, ISDCS 2021, Higashi-Hiroshima, Japan, March 3-5, 2021. pages 1-4, IEEE, 2021. [doi]
Abstract is missing.