High energy efficient ultra-low voltage SRAM design: Device, circuit, and architecture

Tony T. Kim, Bo Wang 0020, Anh-Tuan Do. High energy efficient ultra-low voltage SRAM design: Device, circuit, and architecture. In International SoC Design Conference, ISOCC 2012, Jeju Island, South Korea, November 4-7, 2012. pages 367-370, IEEE, 2012. [doi]

@inproceedings{Kim0D12,
  title = {High energy efficient ultra-low voltage SRAM design: Device, circuit, and architecture},
  author = {Tony T. Kim and Bo Wang 0020 and Anh-Tuan Do},
  year = {2012},
  doi = {10.1109/ISOCC.2012.6407117},
  url = {https://doi.org/10.1109/ISOCC.2012.6407117},
  researchr = {https://researchr.org/publication/Kim0D12},
  cites = {0},
  citedby = {0},
  pages = {367-370},
  booktitle = {International SoC Design Conference, ISOCC 2012, Jeju Island, South Korea, November 4-7, 2012},
  publisher = {IEEE},
  isbn = {978-1-4673-2989-7},
}