A Novel Indium Gallium Zinc Oxide Channel-Based Electrochemical Field Effect Transistor for Physical Reservoir Computing

Hyejin Kim, Jinho Byun, Junghoon Park, Kiheun Lee, Daewon Ha, Seyoung Kim. A Novel Indium Gallium Zinc Oxide Channel-Based Electrochemical Field Effect Transistor for Physical Reservoir Computing. Adv. Intell. Syst., 8(1), January 2026. [doi]

Abstract

Abstract is missing.