Yitae Kim, Wonchul Choi, Donghyuk Park, Heegeun Jeoung, Bumsuk Kim, Youngsun Oh, Sunghoon Oh, Byungjun Park, Euiyeol Kim, YunKi Lee, Taesub Jung, Yongwoon Kim, Sukki Yoon, Seokyong Hong, Jesuk Lee, Sangil Jung, Changrok Moon, Yongin Park, Duckhyung Lee, Duckhyun Chang. A 1/2.8-inch 24Mpixel CMOS image sensor with 0.9μm unit pixels separated by full-depth deep-trench isolation. In 2018 IEEE International Solid-State Circuits Conference, ISSCC 2018, San Francisco, CA, USA, February 11-15, 2018. pages 84-86, IEEE, 2018. [doi]
@inproceedings{KimCPJKOOPKLJKY18,
title = {A 1/2.8-inch 24Mpixel CMOS image sensor with 0.9μm unit pixels separated by full-depth deep-trench isolation},
author = {Yitae Kim and Wonchul Choi and Donghyuk Park and Heegeun Jeoung and Bumsuk Kim and Youngsun Oh and Sunghoon Oh and Byungjun Park and Euiyeol Kim and YunKi Lee and Taesub Jung and Yongwoon Kim and Sukki Yoon and Seokyong Hong and Jesuk Lee and Sangil Jung and Changrok Moon and Yongin Park and Duckhyung Lee and Duckhyun Chang},
year = {2018},
doi = {10.1109/ISSCC.2018.8310195},
url = {https://doi.org/10.1109/ISSCC.2018.8310195},
researchr = {https://researchr.org/publication/KimCPJKOOPKLJKY18},
cites = {0},
citedby = {0},
pages = {84-86},
booktitle = {2018 IEEE International Solid-State Circuits Conference, ISSCC 2018, San Francisco, CA, USA, February 11-15, 2018},
publisher = {IEEE},
isbn = {978-1-5090-4940-0},
}