A 1.1V 16Gb DDR5 DRAM with Probabilistic-Aggressor Tracking, Refresh-Management Functionality, Per-Row Hammer Tracking, a Multi-Step Precharge, and Core-Bias Modulation for Security and Reliability Enhancement

Woongrae Kim, Chulmoon Jung, Seong Nyuh Yoo, Duckhwa Hong, Jeongjin Hwang, Jungmin Yoon, Oh-Yong Jung, Joonwoo Choi, Sanga Hyun, Mankeun Kang, Sangho Lee, Dohong Kim, Sanghyun Ku, Donhyun Choi, Nogeun Joo, Sangwoo Yoon, Junseok Noh, Byeongyong Go, Cheolhoe Kim, Sunil Hwang, Mihyun Hwang, Seol-Min Yi, Hyungmin Kim, Sanghyuk Heo, Yeonsu Jang, Kyoungchul Jang, Shinho Chu, Yoonna Oh, Kwidong Kim, Junghyun Kim, Soohwan Kim, Jeongtae Hwang, Sangil Park, Junphyo Lee, In-Chul Jeong, Joohwan Cho, Jonghwan Kim. A 1.1V 16Gb DDR5 DRAM with Probabilistic-Aggressor Tracking, Refresh-Management Functionality, Per-Row Hammer Tracking, a Multi-Step Precharge, and Core-Bias Modulation for Security and Reliability Enhancement. In IEEE International Solid- State Circuits Conference, ISSCC 2023, San Francisco, CA, USA, February 19-23, 2023. pages 414-415, IEEE, 2023. [doi]

@inproceedings{KimJYHHYJCHKLKKCJYNGKHHYKHJJCOKKKHPLJ23,
  title = {A 1.1V 16Gb DDR5 DRAM with Probabilistic-Aggressor Tracking, Refresh-Management Functionality, Per-Row Hammer Tracking, a Multi-Step Precharge, and Core-Bias Modulation for Security and Reliability Enhancement},
  author = {Woongrae Kim and Chulmoon Jung and Seong Nyuh Yoo and Duckhwa Hong and Jeongjin Hwang and Jungmin Yoon and Oh-Yong Jung and Joonwoo Choi and Sanga Hyun and Mankeun Kang and Sangho Lee and Dohong Kim and Sanghyun Ku and Donhyun Choi and Nogeun Joo and Sangwoo Yoon and Junseok Noh and Byeongyong Go and Cheolhoe Kim and Sunil Hwang and Mihyun Hwang and Seol-Min Yi and Hyungmin Kim and Sanghyuk Heo and Yeonsu Jang and Kyoungchul Jang and Shinho Chu and Yoonna Oh and Kwidong Kim and Junghyun Kim and Soohwan Kim and Jeongtae Hwang and Sangil Park and Junphyo Lee and In-Chul Jeong and Joohwan Cho and Jonghwan Kim},
  year = {2023},
  doi = {10.1109/ISSCC42615.2023.10067805},
  url = {https://doi.org/10.1109/ISSCC42615.2023.10067805},
  researchr = {https://researchr.org/publication/KimJYHHYJCHKLKKCJYNGKHHYKHJJCOKKKHPLJ23},
  cites = {0},
  citedby = {0},
  pages = {414-415},
  booktitle = {IEEE International Solid- State Circuits Conference, ISSCC 2023, San Francisco, CA, USA, February 19-23, 2023},
  publisher = {IEEE},
  isbn = {978-1-6654-9016-0},
}