Yong Hun Kim, Hyung Jin Kim, Jaemin Choi, Min-Su Ahn, Dongkeon Lee, Seung Hyun Cho, Dong-Yeon Park, Young Jae Park, Min-Soo Jang, Yong-Jun Kim, Jinyong Choi, Sung-Woo Yoon, Jae-Woo Jung, Jae-Koo Park, Jae-Woo Lee, Dae Hyun Kwon, Hyung-Seok Cha, Si-Hyeong Cho, Seong-Hoon Kim, Jihwa You, Kyoung-Ho Kim, Dae-Hyun Kim, Byung-Cheol Kim, Young Kwan Kim, Jun-Ho Kim, Seouk-Kyu Choi, Chan Young Kim, Byongwook Na, Hye-In Choi, Reum Oh, Jeong-Don Ihm, Seung-Jun Bae, Nam Sung Kim, Jung-Bae Lee. rd-Generation 10nm DRAM. In IEEE International Solid-State Circuits Conference, ISSCC 2021, San Francisco, CA, USA, February 13-22, 2021. pages 346-348, IEEE, 2021. [doi]
@inproceedings{KimKCALCPPJKCYJ21,
title = {rd-Generation 10nm DRAM},
author = {Yong Hun Kim and Hyung Jin Kim and Jaemin Choi and Min-Su Ahn and Dongkeon Lee and Seung Hyun Cho and Dong-Yeon Park and Young Jae Park and Min-Soo Jang and Yong-Jun Kim and Jinyong Choi and Sung-Woo Yoon and Jae-Woo Jung and Jae-Koo Park and Jae-Woo Lee and Dae Hyun Kwon and Hyung-Seok Cha and Si-Hyeong Cho and Seong-Hoon Kim and Jihwa You and Kyoung-Ho Kim and Dae-Hyun Kim and Byung-Cheol Kim and Young Kwan Kim and Jun-Ho Kim and Seouk-Kyu Choi and Chan Young Kim and Byongwook Na and Hye-In Choi and Reum Oh and Jeong-Don Ihm and Seung-Jun Bae and Nam Sung Kim and Jung-Bae Lee},
year = {2021},
doi = {10.1109/ISSCC42613.2021.9366050},
url = {https://doi.org/10.1109/ISSCC42613.2021.9366050},
researchr = {https://researchr.org/publication/KimKCALCPPJKCYJ21},
cites = {0},
citedby = {0},
pages = {346-348},
booktitle = {IEEE International Solid-State Circuits Conference, ISSCC 2021, San Francisco, CA, USA, February 13-22, 2021},
publisher = {IEEE},
isbn = {978-1-7281-9549-0},
}