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Bias Polarity Dependent Resistive Switching Behaviors in Silicon Nitride-Based Memory Cell

Sungjun Kim, Min-Hwi Kim, Seongjae Cho, Byung-Gook Park. Bias Polarity Dependent Resistive Switching Behaviors in Silicon Nitride-Based Memory Cell. IEICE Transactions, 99-C(5):547-550, 2016. [doi]

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Sungjun Kim

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Min-Hwi Kim

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Seongjae Cho

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Byung-Gook Park

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