Bias Polarity Dependent Resistive Switching Behaviors in Silicon Nitride-Based Memory Cell

Sungjun Kim, Min-Hwi Kim, Seongjae Cho, Byung-Gook Park. Bias Polarity Dependent Resistive Switching Behaviors in Silicon Nitride-Based Memory Cell. IEICE Transactions, 99-C(5):547-550, 2016. [doi]

Abstract

Abstract is missing.