Keunwoo Kim, Rouwaida Kanj, Rajiv V. Joshi. Impact of FinFET technology for power gating in nano-scale design. In Fifteenth International Symposium on Quality Electronic Design, ISQED 2014, Santa Clara, CA, USA, March 3-5, 2014. pages 543-547, IEEE, 2014. [doi]
@inproceedings{KimKJ14,
title = {Impact of FinFET technology for power gating in nano-scale design},
author = {Keunwoo Kim and Rouwaida Kanj and Rajiv V. Joshi},
year = {2014},
doi = {10.1109/ISQED.2014.6783374},
url = {http://dx.doi.org/10.1109/ISQED.2014.6783374},
researchr = {https://researchr.org/publication/KimKJ14},
cites = {0},
citedby = {0},
pages = {543-547},
booktitle = {Fifteenth International Symposium on Quality Electronic Design, ISQED 2014, Santa Clara, CA, USA, March 3-5, 2014},
publisher = {IEEE},
}