Demonstration of crystalline IGZO transistor with high thermal stability for memory applications

Whayoung Kim, Jaehyeon Kim, Dongjin Ko, Jun-Hwe Cha, Gyeongcheol Park, Youngbae Ahn, Jong-Young Lee, Minchul Sung, Hyejung Choi, Seung Wook Ryu, Seiyon Kim, Myung Hee Na, Seonyong Cha. Demonstration of crystalline IGZO transistor with high thermal stability for memory applications. In 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, June 11-16, 2023. pages 1-2, IEEE, 2023. [doi]

@inproceedings{KimKKCPALSCRKNC23,
  title = {Demonstration of crystalline IGZO transistor with high thermal stability for memory applications},
  author = {Whayoung Kim and Jaehyeon Kim and Dongjin Ko and Jun-Hwe Cha and Gyeongcheol Park and Youngbae Ahn and Jong-Young Lee and Minchul Sung and Hyejung Choi and Seung Wook Ryu and Seiyon Kim and Myung Hee Na and Seonyong Cha},
  year = {2023},
  doi = {10.23919/VLSITechnologyandCir57934.2023.10185258},
  url = {https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185258},
  researchr = {https://researchr.org/publication/KimKKCPALSCRKNC23},
  cites = {0},
  citedby = {0},
  pages = {1-2},
  booktitle = {2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, June 11-16, 2023},
  publisher = {IEEE},
  isbn = {978-4-86348-806-9},
}