Dongkyun Kim, Kibong Koo, Yongmi Kim, Dong Uk Lee, Jaein Lee, Ki Hun Kwon, Byeongchan Choi, Hongjung Kim, Sanghyun Ku, Jong-Sam Kim, Seungwook Oh, Minsu Park, Dain Im, Yongsung Lee, Mingyu Park, Jonghyuck Choi, Junhyun Chun, Kyowon Jin, Sungchun Jang, Jun-Yong Song, Hankyu Chi, Geunho Choi, Sunmyung Choi, Changhyun Kim, Minsik Han. A 1.1-V 10-nm Class 6.4-Gb/s/Pin 16-Gb DDR5 SDRAM With a Phase Rotator-ILO DLL, High-Speed SerDes, and DFE/FFE Equalization Scheme for Rx/Tx. J. Solid-State Circuits, 55(1):167-177, 2020. [doi]
@article{KimKKLLKCKKKOPI20,
title = {A 1.1-V 10-nm Class 6.4-Gb/s/Pin 16-Gb DDR5 SDRAM With a Phase Rotator-ILO DLL, High-Speed SerDes, and DFE/FFE Equalization Scheme for Rx/Tx},
author = {Dongkyun Kim and Kibong Koo and Yongmi Kim and Dong Uk Lee and Jaein Lee and Ki Hun Kwon and Byeongchan Choi and Hongjung Kim and Sanghyun Ku and Jong-Sam Kim and Seungwook Oh and Minsu Park and Dain Im and Yongsung Lee and Mingyu Park and Jonghyuck Choi and Junhyun Chun and Kyowon Jin and Sungchun Jang and Jun-Yong Song and Hankyu Chi and Geunho Choi and Sunmyung Choi and Changhyun Kim and Minsik Han},
year = {2020},
doi = {10.1109/JSSC.2019.2948806},
url = {https://doi.org/10.1109/JSSC.2019.2948806},
researchr = {https://researchr.org/publication/KimKKLLKCKKKOPI20},
cites = {0},
citedby = {0},
journal = {J. Solid-State Circuits},
volume = {55},
number = {1},
pages = {167-177},
}